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| BUZ 272 SIPMOS (R) Power Transistor * P channel * Enhancement mode * Avalanche rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 272 VDS -100 V ID -15 A RDS(on) 0.3 Package TO-220 AB Ordering Code C67078-S1454-A2 Maximum Ratings Parameter Continuous drain current Symbol Values -15 Unit A ID IDpuls -60 TC = 25 C Pulsed drain current TC = 25 C Avalanche energy, single pulse EAS 290 mJ ID = -15 A, VDD = -25 V, RGS = 25 L = 1.93 mH, Tj = 25 C Gate source voltage Power dissipation VGS Ptot 20 125 V W TC = 25 C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 1 75 E 55 / 150 / 56 C K/W Semiconductor Group 1 07/96 BUZ 272 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS -100 -3 -0.1 -10 -10 0.2 -4 V VGS = 0 V, ID = -0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) -2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS -1 -100 A VDS = -100 V, VGS = 0 V, Tj = 25 C VDS = -100 V, VGS = 0 V, Tj = 125 C Gate-source leakage current IGSS -100 nA 0.3 VGS = -20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = -10 V, ID = -9.5 A Semiconductor Group 2 07/96 BUZ 272 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 1.5 4.5 2000 360 120 - S pF 2700 540 180 ns 30 45 VDS 2 * ID * RDS(on)max, ID = -9.5 A Input capacitance Ciss Coss - VGS = 0 V, VDS = -25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = -25 V, f = 1 MHz Turn-on delay time td(on) VDD = -30 V, VGS = -10 V, ID = -2.9 A RGS = 50 Rise time tr 120 180 VDD = -30 V, VGS = -10 V, ID = -2.9 A RGS = 50 Turn-off delay time td(off) 125 170 VDD = -30 V, VGS = -10 V, ID = -2.9 A RGS = 50 Fall time tf 120 160 VDD = -30 V, VGS = -10 V, ID = -2.9 A RGS = 50 Semiconductor Group 3 07/96 BUZ 272 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed A -1.15 90 0.23 -15 -60 V -1.7 ns C Values typ. max. Unit ISM VSD trr Qrr TC = 25 C Inverse diode forward voltage VGS = 0 V, IF = -30 A Reverse recovery time VR = -30 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = -30 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 4 07/96 BUZ 272 Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS -10 V -16 130 W 110 A Ptot 100 90 80 70 ID -12 -10 -8 60 50 40 30 20 10 0 0 0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 C 160 -4 -6 -2 TC TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C -10 2 t = 15.0s p Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 K/W ID A ZthJC 100 s 10 0 1 ms -10 1 /I D 10 -1 D = 0.50 0.20 0.10 10 ms R DS (on ) =V DS 10 -2 0.05 0.02 0.01 single pulse -10 0 DC 0 -10 -10 1 V -10 2 10 -3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96 BUZ 272 Typ. output characteristics ID = (VDS) parameter: tp = 80 s -34 A Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS 0.9 a bc d e f g h i j Ptot = 125W l VGS [V] a -4.0 RDS (on) 0.7 0.6 0.5 0.4 0.3 0.2 d ID -28 k b c d -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 -9.0 -10.0 -20.0 -24 j -20 i h e f g h i j -16 -12 g f k l -8 -4 0 0 e k c a b 0.1 0.0 V -28 0 VGS [V] = a b c d e f -4.0 -5.0 -5.5 -6.0 -6.5 -7.0 -4.5 g h i j k -7.5 -8.0 -9.0 -10.0 -20.0 -4 -8 -12 -16 -20 -4 -8 -12 -16 -20 A -28 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max -16 parameter: tp = 80 s, VDS2 x ID x RDS(on)max 7.0 S A 6.0 ID -12 gfs 5.5 5.0 -10 4.5 4.0 -8 3.5 3.0 -6 2.5 2.0 -4 1.5 -2 0 0 1.0 0.5 0.0 -1 -2 -3 -4 -5 -6 -7 -8 V VGS -10 0 -2 -4 -6 -8 -10 -12 A ID -15 Semiconductor Group 6 07/96 BUZ 272 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = -9.5 A, VGS = -10 V 0.9 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA -4.6 V -4.0 RDS (on) 0.7 0.6 0.5 98% VGS(th) -3.6 -3.2 -2.8 -2.4 typ 2% 0.4 0.3 0.2 98% -2.0 -1.6 -1.2 -0.8 typ 0.1 0.0 -60 -0.4 -20 20 60 100 C 160 0.0 -60 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s -10 2 nF C 10 0 A Ciss IF -10 1 Coss 10 -1 Crss -10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -2 0 -10 -1 0.0 -5 -10 -15 -20 -25 -30 V VDS -40 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD Semiconductor Group 7 07/96 BUZ 272 Avalanche energy EAS = (Tj ) parameter: ID = -15 A, VDD = -25 V RGS = 25 , L = 1.93 mH 300 mJ Drain-source breakdown voltage V(BR)DSS = (Tj) -120 V EAS 240 220 200 180 160 140 120 100 80 60 40 20 0 20 V(BR)DSS -114 -112 -110 -108 -106 -104 -102 -100 -98 -96 -94 -92 -90 -60 40 60 80 100 120 C 160 -20 20 60 100 C 160 Tj Tj Semiconductor Group 8 07/96 BUZ 272 Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96 |
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